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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. may 2014 docid026376 rev 1 1/21 STD11N65M2, stp11n65m2, stu11n65m2 n-channel 650 v, 0.6 typ., 7 a mdmesh ii plus? low q g power mosfets in dpak, to-220 and ipak packages datasheet - preliminary data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low qg. these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. '7$% * 6 am01476v1 dpak ipak to-220 1 3 tab 1 2 3 tab 3 2 1 tab order codes v ds r ds(on) max i d STD11N65M2 650 v 0.67 7 a stp11n65m2 stu11n65m2 table 1. device summary order codes marking package packaging STD11N65M2 11n65m2 dpak tape and reel stp11n65m2 to-220 tube stu11n65m2 ipak www.st.com
contents STD11N65M2, stp11n65m2, stu11n65m2 2/21 docid026376 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 dpak, STD11N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220, stp11n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 ipak, stu11n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid026376 rev 1 3/21 STD11N65M2, stp11n65m2, stu11n65m2 electrical ratings 21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case and limited by package. drain current (continuous) at t c = 25 c 7 a i d (1) drain current (continuous) at t c = 100 c 4.4 a i dm (2) 2. pulse width limited by t jmax drain current (pulsed) 28 a p tot (1) total dissipation at t c = 25 c 85 w dv/dt (3) 3. i sd 7 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd =80% v (br)dss . peak diode recovery voltage slope (starting t j = 25 c, i d = i as , v dd = 50 v) 15 v/ns dv/dt (4) 4. v ds 520 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 table 3. thermal data symbol parameter value unit dpak to-220 ipak r thj-case thermal resistance junction-case max 1.47 c/w r thj-amb thermal resistance junction-amb max 62.5 100 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 1.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 110 mj
electrical characteristics STD11N65M2, stp11n65m2, stu11n65m2 4/21 docid026376 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.5 a 0.6 0.67 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 100 v, f = 1 mhz, - 410 - pf c oss output capacitance - 20 - pf c rss reverse transfer capacitance -0.95-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 520 v - 83 - pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 6.4 - q g total gate charge v dd = 520 v, i d = 7 a, v gs = 10 v (see figure 17 ) -12.5-nc q gs gate-source charge - 3.2 - nc q gd gate-drain charge - 5.8 - nc
docid026376 rev 1 5/21 STD11N65M2, stp11n65m2, stu11n65m2 electrical characteristics 21 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 3.5 a, r g = 4.7 , v gs = 10 v (see figure 16 and 21 ) -9.5-ns t r rise time - 7.5 - ns t d(off) turn-off delay time - 26 - ns t f fall time - 15 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 7 a i sdm (1) (2) 1. pulse width limited by safe operating area 2. test condition is referred to through-hole package source-drain current (pulsed) - 28 a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage v gs = 0, i sd = 7 a - 1.6 v t rr reverse recovery time i sd = 7 a (2) , di/dt = 100 a/ s v dd = 60 v (see figure 18 ) -318 ns q rr reverse recovery charge - 2.5 nc i rrm reverse recovery current - 15.5 a t rr reverse recovery time i sd = 7 a, di/dt = 100 a/ s v dd = 60 v, t j =150 c (see figure 18 ) -437 ns q rr reverse recovery charge - 3.2 nc i rrm reverse recovery current - 15 a
electrical characteristics STD11N65M2, stp11n65m2, stu11n65m2 6/21 docid026376 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak i d 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms t c =150c tamb=25c single pulse 100 s 1 10 10ms gipg120520141711sa figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 i d 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms t c =150c tamb=25c single pulse 100 s 1 10 10ms gipg120520141723sa figure 6. output characteristics figure 7. transfer characteristics i d 6 4 2 0 0 10 v ds (v) (a) 5 15 8 5v 6v v gs = 8, 9, 10v 20 10 7v 12 14 gipd241020131645fsr i d 4 0 0 4 v gs (v) 8 (a) 2 6 8 12 v ds =19v 14 10 6 2 10 gipd241020131653fsr
docid026376 rev 1 7/21 STD11N65M2, stp11n65m2, stu11n65m2 electrical characteristics 21 figure 8. normalized v (br)dss vs temperature figure 9. static drain-source on-resistance figure 10. gate charge vs gate-source voltage figure 11. capacitance variations figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v (br)dss -50 t j (c) (norm) 0 0.93 0.95 0.97 0.99 1.01 i d =1 ma 50 100 1.03 -25 25 75 125 1.05 1.07 1.09 gipd251020131007sa r ds(on) 0.600 0.590 0.580 0.570 0 2 i d (a) ( ) 1 3 0.610 4 5 v gs =10v 6 0.620 0.630 7 gipg200120141659fsr v gs 6 4 2 0 0 q g (nc) (v) 6 8 4 10 v dd =520v 300 200 100 0 400 v ds 8 10 500 v ds (v) i d =7a 2 12 12 gipd251020131029sa c 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 100 1000 gipd251020131055sa v gs(th) 0.8 0.7 t j (c) (norm) -50 0.9 i d =250a 0 50 100 -25 25 75 1.0 1.1 125 gipd251020131132sa r ds(on) 1.3 1.1 0.9 0.7 t j (c) (norm) 0.5 i d =3.5a -50 0 50 100 -25 25 75 125 1.5 1.7 1.9 2.1 2.3 2.5 v gs =10v gipg200120141706fsr
electrical characteristics STD11N65M2, stp11n65m2, stu11n65m2 8/21 docid026376 rev 1 figure 14. source-drain diode forward characteristics figure 15. output capacitance stored energy v sd 0 2 i sd (a) (v) 1 5 3 4 0 0.2 0.4 0.6 t j =-50c t j =150c t j =25c 0.8 1 6 1.2 1.4 gipd251020131114sa eoss 0 v ds (v) (j) 200 100 500 0 1 2 3 300 400 600 gipd251020131124sa
docid026376 rev 1 9/21 STD11N65M2, stp11n65m2, stu11n65m2 test circuits 21 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STD11N65M2, stp11n65m2, stu11n65m2 10/21 docid026376 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid026376 rev 1 11/21 STD11N65M2, stp11n65m2, stu11n65m2 package mechanical data 21 4.1 dpak, STD11N65M2 figure 22. dpak (to-252) type a drawing b2
package mechanical data STD11N65M2, stp11n65m2, stu11n65m2 12/21 docid026376 rev 1 table 9. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid026376 rev 1 13/21 STD11N65M2, stp11n65m2, stu11n65m2 package mechanical data 21 figure 23. dpak (to-252) type a footprint (a) a. all dimensions are in millimeters )3b1
package mechanical data STD11N65M2, stp11n65m2, stu11n65m2 14/21 docid026376 rev 1 4.2 to-220, stp11n65m2 figure 24. to-220 type a drawing bw\sh$b5hyb7
docid026376 rev 1 15/21 STD11N65M2, stp11n65m2, stu11n65m2 package mechanical data 21 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STD11N65M2, stp11n65m2, stu11n65m2 16/21 docid026376 rev 1 4.3 ipak, stu11n65m2 figure 25. ipak (to-251) drawing 0068771_k
docid026376 rev 1 17/21 STD11N65M2, stp11n65m2, stu11n65m2 package mechanical data 21 table 11. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
packaging mechanical data STD11N65M2, stp11n65m2, stu11n65m2 18/21 docid026376 rev 1 5 packaging mechanical data figure 26. tape for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid026376 rev 1 19/21 STD11N65M2, stp11n65m2, stu11n65m2 packaging mechanical data 21 figure 27. reel for dpak (to-252) table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STD11N65M2, stp11n65m2, stu11n65m2 20/21 docid026376 rev 1 6 revision history table 13. document revision history date revision changes 16-may-2014 1 first release.
docid026376 rev 1 21/21 STD11N65M2, stp11n65m2, stu11n65m2 21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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